Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

F. Moscatelli; P. Maccagnani; D. Passeri; G. M. Bilei; L. Servoli; A. Morozzi; G. -F. Dalla Betta; R. Mendicino; M. Boscardin; N. Zorzi

doi:10.1109/nssmic.2015.7581944

arXiv · 1611.10132

Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

F. Moscatelli·P. Maccagnani·D. Passeri·G. M. Bilei·L. Servoli·A. Morozzi·G. -F. Dalla Betta·R. Mendicino·M. Boscardin·N. Zorzi

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Abstract

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.

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F. Moscatelli, P. Maccagnani, D. Passeri, G. M. Bilei, L. Servoli, A. Morozzi, G. -F. Dalla Betta, R. Mendicino, M. Boscardin, N. Zorzi. 2016-11-30. Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors. https://doi.org/10.1109/nssmic.2015.7581944

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