arXiv subjects

Michael E. Flatté

Publications and source records attributed to Michael E. Flatté.

88 records · Page 5Linked to original sources

arXiv2010

Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots

The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.

cond-mat.mes-hall↗

arXiv2010

Electron beam formation from spin-orbit interactions in zincblende semiconductor quantum wells

We find a dramatic enhancement of electron propagation along a narrow range of real-space angles from an isotropic source in a two-dimensional quantum well made from a zincblende semiconductor. This ``electron beam'' formation is caused by the interplay between spin-orbit interaction originating from a perpendicular electric field to the quantum well and the intrinsic spin-orbit field of the zincblende crystal lattice in a quantum well, in situations where the two fields are different in strength but of the same order of magnitude. Beam formation is associated with caustics and can be described semi-classically using a stationary phase analysis.

cond-mat.mes-hall↗

arXiv2010

Anholonomic spin manipulation in drift transport in semiconductors

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

cond-mat.mes-hall↗

arXiv2009

Spin Injection Enhancement Through Schottky Barrier Superlattice Design

We predict it is possible to achieve high-efficiency room-temperature spin injection from a mag- netic metal into InAs-based semiconductors using an engineered Schottky barrier based on an InAs/AlSb superlattice. The Schottky barrier with most metals is negative for InAs and positive for AlSb. For such metals there exist InAs/AlSb superlattices with a conduction band edge perfectly aligned with the metal's Fermi energy. The initial AlSb layer can be grown to the thickness required to produce a desired interface resistance. We show that the conductivity and spin lifetimes of such superlattices are sufficiently high to permit efficient spin injection from ferromagnetic metals.

cond-mat.mes-hall↗

arXiv2008

Electric-field control of a hydrogenic donor's spin in a semiconductor

An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.

cond-mat.mes-hall↗

arXiv2008

Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate

We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.

cond-mat.mes-hall↗

arXiv2006

Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.

cond-mat.mes-hall↗

arXiv2006

Current-induced spin polarization in nonmagnetic semiconductor junctions

Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for current-induced spin polarization are (1) the presence of built-in spatially-varying electric fields in the junction and (2) energy-dependent carrier scattering processes. Spin-orbit interactions are not required for this effect, thus it should occur in materials like silicon that lack significant spin-orbit interactions. Approximate analytic expressions as well as detailed numerical simulations of the time-dependent nonlinear spin transport in a GaAs junction strongly suggest that the recent experimental observation of current-induced spin polarization in this system [Y. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev. Lett. 93, 176601 (2004)] may be explained by this effect.

cond-mat.mes-hall↗

arXiv2006

Performance of a spin-based insulated gate field effect transistor

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation. The different origins of transistor action lead to distinct size dependences of the power dissipation in these transistors and permit sufficiently small spin-based transistors to surpass the performance of charge-based transistors at room temperature or above. This includes lower threshold voltages, smaller gate capacitances, reduced gate switching energies and smaller source-drain leakage currents.

cond-mat.mes-hall↗

arXiv2005

Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor

The spin orientation of a magnetic dopant in a zincblende semiconductor strongly influences the spatial structure of an acceptor state bound to the dopant. The acceptor state has a roughly oblate shape with the short axis aligned with the dopant's core spin. For a Mn dopant in GaAs the local density of states at a site 8 angstrom away from the dopant can change by as much by 90% when the Mn spin orientation changes. These changes in the local density of states could be probed by scanning tunneling microscopy to infer the magnetic dopant's spin orientation.

cond-mat.mtrl-sci↗

arXiv2005

Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.

cond-mat.mes-hall↗

arXiv2004

Lande g factors and orbital momentum quenching in semiconductor quantum dots

We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and confinement energy significantly modify the effective g factors of the semiconductor material from which the dot and barrier are constructed, yet these effects are insufficient to explain our results. We find that the quantization of the quantum dot electronic states further quenches the orbital angular momentum of the dot states, pushing the electron g factor towards 2, even when all the semiconductor constituents of the dot have negative g factors. This leads to trends in the dot's electron g factors that are the opposite of those expected from the effective g factors of the dot and barrier material. Both electron and hole g factors are strongly dependent on the magnetic field orientation; hole g factors for InAs/GaAs quatum dots have large positive values along the growth direction and small negative values in-plane. The approximate shape of a quantum dot can be determined from measurements of this g factor asymmetry.

cond-mat.mtrl-sci↗

arXiv2004

Spin Gunn Effect

We predict that the flow of unpolarized current in electron-doped GaAs and InP at room temperature is unstable at high electric fields to the dynamic formation of spin-polarized current pulses. Spin-polarized current is spontaneously generated because the conductivity of a spin-polarized electron gas differs from that of an unpolarized electron gas, even in the absence of spin-orbit interaction. Magnetic fields are not required for the generation of these spin-polarized current pulses, although they can help align the polarization of sequential pulses along the same axis.

cond-mat.mes-hall↗

arXiv2002

Van Hove features in BSCCO(2212) and effective parameters for Ni impurities inferred from STM spectra

We present a detailed quantitative comparison between theoretical calculations of the local density of states and recent experimental measurements of scanning tunneling spectra around Ni impurities in BSCCO(2212). A double-peak structure on the hole side of the spectrum at the Ni site is identified as the spin-split van Hove singularity in the band structure. The Ni atom induces local changes in hopping matrix elements comparable in size to the induced on-site spin-dependent potential. We find evidence from the measurements of order parameter suppression in the vicinity of the Ni impurity. These extracted impurity parameters can be of use in quantitative calculations of macroscopic response properties, such as the AC conductivity.

cond-mat.supr-con↗

arXiv2000

Quasiparticle resonant states as a probe of short-range electronic structure and Andreév coherence

The recently observed properties of quasiparticle resonant states near impurities on the surface of superconducting BSCCO demonstrate that in-plane Andreev processes are either absent or phase-incoherent. Analysis of the spectral and spatial details of the electronic structure near a Zn impurity also suggest an effective magnetic component of the impurity potential. Further experiments are proposed to clarify whether the effective moments of nearby impurities are correlated.

cond-mat.supr-con↗

arXiv1995

Classical and Quantum Dynamics of a Periodically Driven Particle in a Triangular Well

We investigate the correspondence between classical and quantum mechanics for periodically time dependent Hamiltonian systems, using the example of a periodically forced particle in a one-dimensional triangular well potential. In particular, we consider quantum mechanical Floquet states associated with resonances in the classical phase space. When the classical motion exhibits {\it sub}harmonic resonances, the corresponding Floquet states maintain the driving field's periodicity through dynamical tunneling. This principle applies both to Floquet states associated with classical invariant vortex tubes surrounding stable, elliptic periodic orbits and to Floquet states that are associated with unstable, hyperbolic periodic orbits. The triangular well model also poses a yet unsolved mathematical problem, related to perturbation theory for systems with a dense pure point spectrum. The present approximate analytical and numerical results indicate that quantum tunneling between different resonance zones is of crucial importance for the question whether the driven triangular well has a dense point or an absolutely continuous quasienergy spectrum, or whether there is a transition from the one to the other.

cond-mat↗