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V. M. Pudalov

Publications and source records attributed to V. M. Pudalov.

At least 73 records · Page 4Linked to original sources
arXiv2008

Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the ρ(T,n) data.

cond-mat.str-el↗
arXiv2007

Intervalley scattering and weak localization in Si-based two-dimensional structures

We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction of the phase breaking time tau_phi and the intervalley scattering time tau_v. The temperature dependences tau_phi(T) for all studied structures are in good agreement with the theory of electron-electron interaction effects in two-dimensional systems. The intervalley scattering is elastic and rather strong: tau_v is typically only an order of magnitude greater than the transport time, tau. It is found that the intervalley scattering rate is temperature-independent and the ratio tau_v/tau decreases with increasing the electron density. These observations suggest that the roughness of the Si-SiO2 interface plays the major role in intervalley scattering.

cond-mat.dis-nn↗
arXiv2006

Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the ρ(T,B) data and the RG theory in a wide range of the in-plane fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.

cond-mat.str-el↗
arXiv2006

Charge Transport in a Spin-Polarized 2D Electron System in Silicon

The temperature dependences of the conductivity σ(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane. Measurements were carried out in a wide temperature range (1.4-9)K, in the ballistic regime of electron-electron interaction, i.e., for Tτ> 1. In zero magnetic field, the data obtained for σ(T) are quantitatively described by the theory of interaction corrections. In the fully spin-polarized state, the measured σ(T) dependences are nonlinear and even nonmonotonic for the same temperature range, where the σ(T) dependences are monotonic in the absence of the field. Nevertheless, the low-temperature parts of the experimental σ(T) dependences are linear and are qualitatively consistent with the calculated interaction corrections.

cond-mat.str-el↗
arXiv2005

Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6

In order to clarify the origin of the "Rapid Oscillation" (RO) in (TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field Induced Spin Density Wave (FISDW) phase. We have found that in the FISDW insulating state, the Fermi surface is not totally gapped; the remaining 2D metallic pockets are quantized in magnetic field and give rise to the RO. Decreasing temperature does not change the size and orientation of the closed pockets, rather, it causes depopulation of the delocalized states in favor of the localized ones, resulting in the disappearance of the RO.

cond-mat.str-el↗
arXiv2005

Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.

cond-mat.str-el↗
arXiv2004

Light-induced switching in the back-gated organic transistors with built-in conduction channel

We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF state with a short pulse of light switches the device into the ON state that persists in the dark for days. The OFF state can be restored by cycling the back gate voltage. The observed effect can be explained by screening of the back-gate electric field by the charges photo-generated in the bulk of organic semiconductor.

cond-mat.soft↗
arXiv2004

Metallic conduction, apparent metal-insulator transition and related phenomena in two-dimensional electron liquid

The lecture introduces a reader to the relatively young field of physics of strongly interacting and disordered 2D electron system, in particular, to the phenomena of the metallic conduction and the apparent metal-insulator transition in 2D. The paper briefly overviews the experimental data on the electron transport, magnetotransport, spin-magnetization in 2D, and on the electron-electron interaction effects.

cond-mat.str-el↗
arXiv2004

Reply to Comment (cond-mat/0311174)

We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.

cond-mat.str-el↗
arXiv2004

On the Electron-Electron Interactions in Two Dimensions

In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.

cond-mat.str-el↗
arXiv2003

Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?

We report on experimental studies of the character of phase transitions in the quasi-1D organic compound (TMTSF)2PF6 in the close vicinity of the borders between the paramagnetic metal PM, antiferromagnetic insulator AF, and superconducting SC states. In order to drive the system through the phase border P_0(T_0), the sample was maintained at fixed temperature T and pressure P, whereas the critical pressure P_0 was tuned by applying the magnetic field B. In this approach, the magnetic field was used (i) for tuning (P-P_0), and (ii) for identifying the phase composition (due to qualitatively different magnetoresistance behavior in different phases). Experimentally, we measured R(B) and its temperature dependence R(B,T) in the pressure range (0 - 1)GPa. Our studies focus on the features of the magnetoresistance at the phase transition between the PM and AF phases, in the close vicinity to the superconducting transition at T~1K. We found pronounced history effects arising when the AF/PM phase border is crossed by sweeping the magnetic field: the resistance depends on a trajectory which the system arrives at a given point of the P-B-T phase space. In the transition from the PM to AF phase, the features of the PM phase extends well into the AF phase. At the opposite transition from the AF to PM phase, the features of the AF phase are observed in the PM phase. These results evidence for a macroscopically inhomogeneous state, which contains macroscopic inclusions of the minority phase. When the system is driven away from the transition, the homogeneous state is restored; upon a return motion to the phase boundary, no signatures of the minority phase are observed up to the very phase boundary.

cond-mat.str-el↗
arXiv2003

Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices.

cond-mat.str-el↗
arXiv2002

Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.

cond-mat.str-el↗
arXiv2002

Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers

We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT. Both the effective spin susceptibility χ* and mass m* remain finite and show no signatures of divergency at the critical density for both samples studied. To test possible divergency of χ*(n) and m*(n) at even lower densities, we have analyzed the data on χ*(n) and m*(n) in terms of a critical dependence χ*, m* ~ (n/n_0 -1)^{-α}. Our data suggest that χ* and m* may diverge at n_0 < 0.5x10^{11}/cm^2 (r_s > 12), which is significantly smaller than n_c.

cond-mat.str-el↗
arXiv2002

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T).

cond-mat.str-el↗
arXiv2002

Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality

In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, measured in the vicinity of the metal-insulator transition in 2D, carry a strong imprint of individuality of the quenched disorder determined by V^{cool}. This demonstrates that the observed transition between ``metallic'' and insulating regimes involves both, universal effects of electron-electron interaction and sample-specific effects. Far away from the transition, at lower carrier densities and lower resistivities < 0.1 h/e^2, the transport and magnetotransport become nearly universal.

cond-mat.str-el↗