Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

U. Kruchonak; S. Abou El-Azm; K. Afanaciev; G. Chelkov; M. Demichev; M. Gostkin; A. Guskov; E. Firu; V. Kobets; A. Leyva; d; A. Nozdrin; S. Porokhovoy; A. Sheremetyeva; P. Smolyanskiy; A. Torres; A. Tyazhev; O. Tolbanov; N. Zamyatin; A. Zarubin; A. Zhemchugov

doi:10.1016/j.nima.2020.164204

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arXiv · 2006.01254

Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

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Abstract

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.

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U. Kruchonak, S. Abou El-Azm, K. Afanaciev, G. Chelkov, M. Demichev, M. Gostkin, A. Guskov, E. Firu, V. Kobets, A. Leyva, d, A. Nozdrin, S. Porokhovoy, A. Sheremetyeva, P. Smolyanskiy, A. Torres, A. Tyazhev, O. Tolbanov, N. Zamyatin, A. Zarubin, A. Zhemchugov. 2020-06-01. Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam. https://doi.org/10.1016/j.nima.2020.164204

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