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arXiv · 2603.10127

ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications

Ranie Jeyakumar·Prasanna Venkatesan·Lance Fernandes·Salma Soliman·Priyankka Ravikumar·Taeyoung Song·Chengyang Zhang·Woohyun Hwang·Kwangyou Seo·Suhwan Lim·Wanki Kim·Daewon Ha·Shimeng Yu·Suman Datta·Asif Khan
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Abstract

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer serves as a process-level tuning knob for MW engineering. H2O-grown Al2O3 yields a significantly larger MW (7-8 V) compared to O3 (4 V) for both gate-injection (12/3) and tunnel dielectric (8/3/8) configurations. While the tunnel dielectric (8/3/8) stack maintains robust retention up to 1e4s at 125C despite the larger MW, the gate-injection (12/3) configuration exhibits pronounced retention degradation for the H2O case. The enhanced MW is attributed to higher interlayer leakage associated with H2O-based ALD. These results establish oxidant choice as a key process parameter for co-optimizing MW and retention in ferroelectric NAND technologies.

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Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes, Salma Soliman, Priyankka Ravikumar, Taeyoung Song, Chengyang Zhang, Woohyun Hwang, Kwangyou Seo, Suhwan Lim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan. 2026-03-10. ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications. https://arxiv.org/abs/2603.10127

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